DB101
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB107
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Good for automation insertion
* Surge overload rating - 50 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
DB-1
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
(
)
FEATURES
.255 6.5
(
)
.245 6.2
*
Epoxy : UL flammability classification 94V-0
(
)
)
.350 8.9
*
UL listed under the recognized component directory, file #E94233.
(
.300 7.6
(8.51)
(8.12)
.335
.320
(
)
.135 3.4
(
)
.115 2.9
(
)
)
.165 4.2
.020
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
.155 3.9
(
)
0.5
.060
(
)
)
.205 5.2
(
)
1.5
(
.195 5.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
DB101
50
DB102
100
DB103
200
DB104
400
DB105
600
DB106
800
DB107 UNITS
V
RRM
RMS
1000
700
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
V
35
70
140
280
420
560
Maximum DC Blocking Voltage
V
DC
50
100
200
400
1.0
600
800
1000
Volts
Maximum Average Forward Output Current at T
A
= 40oC
I
O
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
50
Amps
0 C
T
J,
T
STG
-65 to + 150
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
DB101
DB102
DB103
DB104
1.1
DB105
DB106
DB107 UNITS
Volts
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
V
F
uAmps
mAmps
1998-8
Maximum Forward Voltage Drop per Bridge
DC Blocking Voltage per element
@T
A
A
= 25oC
= 125oC
10.0
0.5
I
R
@T