D6JB05 THRU D6JB100
(T =25℃ Unless otherwise specified)
■Electrical Characteristics
a
D6JB05 D6JB10 D6JB20 D6JB40 D6JB60 D6JB80 D6JB100
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
Maximum instantaneous
forward voltage drop per diode
V
V
1.0
5
F
I
=3.0A
FM
T =25℃
j
Maximum DC reverse current
at rated DC blocking voltage
per diode
I
μA
R
100
T =125℃
j
Measured at 1MHz
and Applied Reverse
Voltage of 4.0 V.D.C
Typical junction capacitance
Cj
pF
42
Thermal Characteristics (T =25℃Unless otherwise specified)
■
a
UNIT D6JB05
D6JB10
D6JB20
D6JB40
28.0
D6JB60
D6JB80
D6JB100
PARAMETER
SYMBOL
Between junction and
ambient, Without heatsink
R
θJ-A
Thermal
Resistance
℃/W
Between junction and
case, With heatsink
R
θJ-C
3.5
Note: Device mounted on 75mm x 45mm x 5.5mm Aluminum Plate Heatsink.
Ordering Information (Example)
■
■
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
PACKAGE CODE UNIT WEIGHT(g)
DELIVERY MODE
B1 Approximate 2.4
20
900
1800
Tube
D6JB05 ~D6JB100
Characteristics(Typical)
FIG2:Surge Forward Current Capability
FIG1:Io-Tc Curve
225
150
75
7.5
half sine wave
0
8.3ms 8.3ms
1cycle
6.0
4.5
3.0
with heatsink
non-repetitive
Tj=25℃
without heatsink
Tc-sensing point
1.5
0
heatsink
0
1
70
80
90
100 110 120 130 140 150
Case Temperature(℃)
160
2
5
10
20
50
100
Number of Cycles
2 / 4
S-B011
Rev. 2.5, 18-Apr-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com