TetraFET
D5006UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
B
A
C
1
2
3
4
E
150W – 50V – 175MHz
SINGLE ENDED
F
G
6
5
J
D
H
K
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
Q
N
M
O
P
DV
• LOW C
PIN 1
PIN 3
PIN 5
SOURCE
SOURCE
GATE
PIN 2
PIN 4
PIN 6
DRAIN
rss
SOURCE
SOURCE
• SIMPLE BIAS CIRCUITS
• HIGH GAIN – 13 dB MINIMUM
DIM
A
B
C
D
E
mm
9.09
19.3
45°
5.71
1.65R
10.16
20.32
19.30
1.52R
10.77
22.86
3.17
Tol.
Inches
Tol.
0.13
0.13
5°
0.358
0.760
45°
0.005
0.005
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
0.225
0.065R
0.400
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
F
G
H
J
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
K
M
N
O
P
0.13
4.19
6.35
Q
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
220W
125V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
GSS
±20V
I
21A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3592
Issue 5