ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
80
—
—
Vdc
Collector–Emitter Sustaining Voltage (1)
CEO(sus)
(I = 25 mAdc, I = 0)
C
B
I
µAdc
Collector–Emitter Cutoff Current
CEV
(V
CE
(V
CE
= Rated V
, V
CEV BE(off)
= 4.0 Vdc)
= 4.0 Vdc, T = 100 C)
—
—
—
—
10
= Rated V
, V
100
CEV BE(off)
C
I
—
—
10
µAdc
Emitter Base Cutoff Current
(V = 7.0 Vdc, I = 0)
EBO
EB
C
ON CHARACTERISTICS (1)
h
FE
—
DC Current Gain
(I = 2.0 Adc, V
= 1.0 Vdc)
= 1.0 Vdc)
35
20
—
—
—
—
C
CE
CE
(I = 4.0 Adc, V
C
V
V
Vdc
Collector–Emitter Saturation Voltage
(I = 8.0 Adc, I = 0.4 Adc)
CE(sat)
D44VH10
D45VH10
D44VH10
D45VH10
—
—
—
—
—
—
—
—
0.4
1.0
0.8
1.5
C
B
(I = 8.0 Adc, I = 0.8 Adc)
C
B
(I = 15 Adc, I = 3.0 Adc, T = 100 C)
C
B
C
Vdc
Base–Emitter Saturation Voltage
(I = 8.0 Adc, I = 0.4 Adc)
BE(sat)
D44VH10
D45VH10
D44VH10
D45VH10
—
—
—
—
—
—
—
—
1.2
1.0
1.1
1.5
C
B
(I = 8.0 Adc, I = 0.8 Adc)
C
B
(I = 8.0 Adc, I = 0.4 Adc, T = 100 C)
C
B
C
(I = 8.0 Adc, I = 0.8 Adc, T = 100 C)
C
B
C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(I = 0.1 Adc, V = 10 Vdc, f = 20 MHz)
f
—
50
—
MHz
pF
T
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
test
C
ob
D44VH10
D45VH10
—
—
120
275
—
—
CB
C
SWITCHING CHARACTERISTICS
Delay Time
t
t
—
—
—
—
—
—
—
—
50
250
700
90
ns
d
Rise Time
Storage Time
Fall Time
t
r
(V
CC
= 20 Vdc, I = 8.0 Adc,
C
= I = 0.8 Adc)
I
B1 B2
s
t
f
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
3–414
Motorola Bipolar Power Transistor Device Data