D3V3F8U9LP3810
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current, per IEC 61000-4-5
Peak Pulse Power, per IEC 61000-4-5
Symbol
Value
Unit
Conditions
I/O to VSS, 8/20µs
I/O to VSS, 8/20µs
5
A
IPP
PPP
32
W
ESD Protection – Contact Discharge, per IEC 61000-4-2
ESD Protection – Air Discharge, per IEC 61000-4-2
Operating Temperature
±12
±12
kV
kV
°C
°C
VESD_CONTACT
VESD_AIR
TOP
I/O to VSS
I/O to VSS
—
-55 to +85
-55 to +150
Storage Temperature
—
TSTG
Thermal Characteristics
Characteristic
Power Dissipation Typical (Note 5)
Symbol
PD
R
Value
350
Unit
mW
Thermal Resistance, Junction to Ambient Typical (Note 5)
360
°C/W
JA
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Working Voltage
Symbol
VRWM
IR
Min
—
Typ
—
Max
Unit
V
Test Conditions
3.3
1.0
—
—
—
—
—
—
IR=1mA, I/O to VSS
Reverse Current
—
—
μA
V
VR = 3.3V, I/O to VSS
IR = 1mA, I/O to VSS
IF = -15mA, I/O to VSS
I/O to VSS
Reverse Breakdown Voltage
Forward Clamping Voltage
Holding Reverse Voltage
Holding Reverse Current
Clamping Voltage (Note 6)
Clamping Voltage (Note 6)
Dynamic Reverse Resistance
Dynamic Forward Resistance
Channel Input Capacitance
5.5
-1.0
—
7.0
-0.85
1.19
90
VBR
V
VF
V
VHOLD
IHOLD
VC
—
mA
V
I/O to VSS
—
5
TLP, 16A, tp = 100ns, I/O to VSS
TLP, -16A, tp = 100ns, I/O to VSS
5
V
VC
—
—
0.25
0.2
0.55
—
—
—
Ω
RDIF-R
RDIF-F
CI/O
TLP, 10A, tp = 100ns, I/O to VSS
TLP, 10A, tp = 100ns, VSS to I/O
VI/O = 0V, VSS = 0V, f = 1MHz
—
Ω
—
pF
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website at
http://www.diodes.com/package-outlines.html.
6. Clamping voltage value is based on a TLP model. TLP conditions: Z0=50Ω, tp = 100ns, averaging window; t1=70ns to t2=90ns.
2 of 5
www.diodes.com
October 2017
© Diodes Incorporated
D3V3F8U9LP3810
Document number: DS39456 Rev. 1 – 2