Datasheet > D2V5F4U8MR

D2V5F4U8MR

更新时间： 2023-12-06 20:11:48

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	578K
描述
ESD PROTECTION DIODES

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D2V5F4U8MR 数据手册

D2V5F4U8MR

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Peak Pulse Power Dissipation

Symbol

P_PP

Value

1000

Unit

Conditions

8/20µs, per Figure 1

Peak Pulse Current

8/20µs, per Figure 1

I_PP

ESD Protection – Contact Discharge

ESD Protection – Air Discharge

±8

IEC 61000-4-2 Standard

V_{ESD_Contact}

V_{ESD_Air}

±15

Thermal Characteristics

Characteristic

Package Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Operating Temperature Range

Symbol

Value

Unit

500

P_D

R_JA

T_J

50.12

C/W

-55 to +125

-55 to +150

+260

C

Storage Temperature Range

T_STG

T_L

C

Soldering Temperature, t max = 10s

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Reverse Standoff Voltage

Symbol

V_RWM

I_RM

Min

—

Typ

—

Max

2.5

Unit

Test Conditions

—

Channel Leakage Current (Note 6)

Punch Through Voltage

Snap-Back Voltage

—

µA

V_RWM= 2.5V

2.7

2.5

—

V_PT

I_PT= 2µA

—

V_SB

I_SB= 50mA

—

I_PP= 1A, tp = 8/20μs, Figure 1

I_PP= 48A, tp = 8/20μs, Figure 1

I_PP= 80A, tp = 8/20μs, Figure 1

V_R= 0V, f = 1MHz, each line

Clamping Voltage, Positive Transients

Channel Input Capacitance

—

V_CL

—

2.1

C_T

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on our website at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

120

t = 8

祍

8μs

Rise time = 0.7ns to 1ns

100

Peak Value I

Half Value I /2

8x20 Waveform

as defined by R.E.A.

-10

10 20 30 40 50 60 70 80 90 100

TIME (ns)

t ,

(μs)

祍 )

t_r, TIME (

Figure 1 Pulse Waveform

Figure 1.

Figure 2.

Figure 2 ESD Discharge Current Wave Form

IEC 61000-4-2

IEC 6100-4-2 (330/150pF)

2 of 5

www.diodes.com

November 2022

D2V5F4U8MR

Document number: DS43659 Rev. 2 - 2

123 4 5

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