D24V0L1B2LPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Power Dissipation
Symbol
PPP
Value
90
Unit
W
Conditions
8/20µs, Per Figure 3
Peak Pulse Current
2
A
8/20µs, Per Figure 3
IPP
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
±20
±20
kV
kV
IEC 61000-4-2 Standard
IEC 61000-4-2 Standard
VESD_Contact
VESD_Air
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Symbol
PD
Rθ
Value
250
Unit
mW
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
500
°C/W
JA
-65 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Symbol
VRWM
IRM
Min
—
Typ
—
Max
24
Unit
V
Test Conditions
—
—
—
Channel Leakage Current (Note 6)
100
42
nA
V
VRWM = 24V
—
—
IPP = 1A, tp = 8/20μS
IPP = 2A, tp = 8/20μS
IR = 1mA
Clamping Voltage, Positive Transients
VCL
—
—
46
V
—
Breakdown Voltage
26
—
32
V
VBR
CT
Channel Input Capacitance
6
10
pF
VR = 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website at
http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
2 of 5
www.diodes.com
August 2019
© Diodes Incorporated
D24V0L1B2LPSQ
Document number: DS37495 Rev. 2 - 2