Datasheet > D20XB20

D20XB20

更新时间： 2023-12-06 20:02:12

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	165K
描述
Bridge Rectifiers

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中文翻译

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数据手册

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D20XB20 数据手册

www.eicsemi.com

SILICON BRIDGE RECTIFIERS

D20XB20 - D20XB60

RBV25

PRV : 200 - 600 Volts

Io : 20 Amperes

3.9 ± 0.2

30 ± 0.3

4.9 ± 0.2

3.2 ± 0.1

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* High case dielectric strength of 2000 V_AC@1 Sec

~ ~

* Ideal for printed circuit board

* Very good heat dissipation

* Pb / RoHS Free

^1.0± 0.1

7.5

±0.2 ±0.2

7.5

MECHANICAL DATA :

2.0 ± 0.2

0.7 ±0.1

±0.2

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-0 rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

Dimensions in millimeters

* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

D20XB20

D20XB60

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

200

140

200

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Current

(50Hz Sine wave, R-load)

20 (With heatsink, Tc = 87°C)

3.5 (Without heatsink, Ta = 25°C)

Maximum Peak Forward Surge Current, Tj = 25°C

(50Hz sine wave, Non-repetitive 1 cycle peak value)

FSM

240

I²t

A²S

200

1.1

Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C

Maximum Forward Voltage per Diode at I

Maximum DC Reverse Current, V

( Pulse measurement, Rating of per diode)

= 10 A

=VRRM

μA

Maximum Thermal Resistance, Junction to case

Maximum Thermal Resistance, Junction to Ambient

Operating Junction Temperature

1.5 (With heatsink)

22 (Without heatsink)

150

°C/W

°C

Storage Temperature Range

TSTG

- 40 to + 150

°C

Page 1 of 2

Rev. 03 : August 20, 2012

中文翻译

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