D1213A-02WL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current (Note 7)
Symbol
IPP
Value
5
Unit
A
Conditions
8/20μs, Per Figure 3
Standard IEC 61000-4-2
Standard IEC 61000-4-2
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
±8
kV
kV
VESD_Contact
VESD_Air
±15
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Symbol
Value
200
625
Unit
mW
°C/W
°C
PD
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Rθ
JA
TJ, TSTG
-65 to +150
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7)
Reverse working voltage
Symbol
VRWM
IR
Min
-
Typ
-
Max
3.3
1.0
-
Unit
V
Test Conditions
-
Reverse current (Note 6)
-
0.1
-
μA
V
VR = VRWM = 3.3V
R = 1mA
Reverse breakdown voltage
Forward voltage
VBR
6.0
0.6
-
I
0.8
10.0
0.95
-
V
VF
VCL1
VCL2
RDYN
CT
IF = 8mA
Reverse clamping voltage, Positive Transients
Reverse clamping voltage, Negative Transients
Dynamic resistance
V
IPP = 1A, tp = 8/20μs
IPP = -1A, tp = 8/20μs
IR = 1A, tp = 8/20μs
VR = 1.65V, f = 1MHz
-
-
-
-1.7
0.9
-
-
V
Ω
Capacitance
0.85
1.2
pF
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured between any channel and GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
200
100
75
Note 5
175
150
125
100
75
50
25
0
50
25
0
0
25
TA, AMBIENT TEMPERATURE (
Figure 1 Power Derating Curve
50
75
100
125
150 175
C)
0
25
50
75 100 125 150 175 200
°
TA, AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
2 of 4
www.diodes.com
October 2012
© Diodes Incorporated
D1213A-02WL
Document number: DS35602 Rev. 9 - 2