Datasheet > D1211

D1211

更新时间： 2024-10-02 22:29:03

品牌	Logo	应用领域
SEME-LAB		射频
页数	文件大小	规格书
2页	20K
描述
METAL GATE RF SILICON FET

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中文翻译

获取价格

数据手册

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D1211 数据手册

TetraFET

D1211UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 12.5V – 500MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

SO8 PACKAGE

• VERY LOW C

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

PIN 5 – SOURCE

PIN 6 – GATE

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

PIN 7 – GATE

PIN 8 – SOURCE

Dim.

4.06

5.08

1.27

0.51

3.56

4.06

1.65

Tol.

Inches

0.160

0.200

0.050

0.020

0.140

0.160

0.065

Tol.

• HIGH GAIN – 10 dB MINIMUM

±0.08

+0.25

-0.00

Min.

Max.

Min.

Max.

±0.08

Max.

±0.08

±0.003

+0.010

-0.000

Min.

Max.

Min.

Max.

±0.003

Max.

±0.003

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

0.76

0.030

0.51

1.02

45°

0°

0.020

0.040

45°

0°

7°

0.008

0.086

0.180

7°

0.20

2.18

4.57

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

30W

case

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

40V

±20V

DSS

GSS

10A

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

Prelim. 12/95

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

中文翻译

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