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D10XB10 PDF预览

D10XB10

更新时间： 2022-02-26 11:19:39
品牌 Logo 应用领域
圣诺 - SENO /
页数 文件大小 规格书
2页 59K
描述
10A GLASS PASSIVATED BRIDGE RECTIFIER

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中文翻译

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D10XB10 数据手册

 浏览型号D10XB10的Datasheet PDF文件第2页 
Zibo Seno Electronic Engineering Co., Ltd.  
D10XB05-D10XB100  
10A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500VRMS  
Low Reverse Leakage Current  
Surge Overload Rating to 170A Peak  
Ideal for Printed Circuit Board Applications  
Plastic Material - UL Flammability  
Classification 94V-0  
3S  
Dim  
A
B
C
D
E
Min  
Max  
25.20  
15.30  
24.80  
14.70  
P
N
A
K
4.00 Nominal  
H
17.20  
0.90  
7.30  
17.80  
1.10  
7.70  
·
Lead Free Finish/RoHS Complian  
C
B
D
L
G
H
J
_
3.10 Æ 3.40 Æ  
Mechanical Data  
M
3.30  
1.50  
9.30  
2.50  
3.40  
4.40  
0.60  
3.70  
1.90  
9.70  
2.90  
3.80  
4.80  
0.80  
J
·
·
Case: Molded Plastic  
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
E
K
L
R
M
N
P
·
·
·
·
·
Polarity: Molded on Body  
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 in-lbs Maximum  
Weight: 6.6 grams (approx.)  
Marking: Type Number  
G
R
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
D10XB D10XB D10XB D10XB D10XB D10XB D10XB  
Characteristic  
Symbol  
Unit  
05  
50  
35  
10  
100  
70  
20  
200  
140  
40  
60  
600  
420  
80  
800  
560  
100  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
400  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
10  
V
A
Average Forward Rectified Output Current  
@ TC= 110°C  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
170  
A
Forward Voltage per element  
@ IF = 5.0A  
VFM  
IR  
1.05  
V
10  
500  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC 25°C  
=
mA  
@ TC = 125°C  
I2t Rating for Fusing (t < 8.3ms) (Note 1)  
I2t  
Cj  
120  
55  
A2s  
pF  
Typical Junction Capacitance per Element (Note 2)  
Typical Thermal Resistance, Junction to Case (Note 3)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
1.4  
°C/W  
°C  
-65 to +150  
Notes:  
1. Non-repetitive, for t > 1.0ms and < 8.3ms.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.  
www.senocn.com  
D10XB05-D10XB100  
1 of 2  
Alldatasheet  
12

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