TetraFET
D1053UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
B
B
A
A
K
C
2
3
4
7
5
6
(2 pls)
1
50W – 28V – 1GHz
PUSH–PULL
D
E
O
9
8
(2 pls)
F
G
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
H
J
I
M
N
DB
• VERY LOW C
PIN 1
PIN 3
PIN 5
PIN 7
PIN 9
SOURCE (COMMON) PIN 2
DRAIN 1
DRAIN 3
GATE 4
GATE 2
rss
DRAIN 2
DRAIN 4
GATE 3
GATE 1
PIN 4
PIN 6
PIN 8
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
1.52
1.52
45°
16.38
6.35
18.41
12.70
5.08
24.76
1.52
0.81R
0.13
2.16
Tol.
Inches
Tol.
• HIGH GAIN – 7.5 dB MINIMUM
0.13
0.13
5°
0.060
0.060
45°
0.005
0.005
5°
0.26
0.13
0.13
0.26
0.13
0.13
0.13
0.13
0.02
0.13
0.13
0.645
0.250
0.725
0.500
0.200
0.975
0.060
0.032R
0.005
0.085
0.065R
0.010
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.001
0.005
0.005
APPLICATIONS
F
G
H
I
J
K
M
N
O
• VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
1.65R
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
175W
70V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
±20V
GSS
I
5A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Prelim. 3/95
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.