Datasheet > D1006UK

D1006UK

更新时间： 2024-09-24 22:29:03

品牌	Logo	应用领域
SEME-LAB		射频
页数	文件大小	规格书
4页	62K
描述
METAL GATE RF SILICON FET

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中文翻译

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数据手册

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D1006UK 数据手册

TetraFET

D1006UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

120W – 28V – 175MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

PIN 1

PIN 3

PIN 5

SOURCE

GATE

PIN 2

PIN 4

PIN 6

DRAIN

rss

SOURCE

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

9.09

19.3

45°

5.71

Tol.

Inches

Tol.

0.13

5°

0.358

0.760

45°

0.005

5°

• HIGH GAIN – 14 dB MINIMUM

0.13

0.25

0.13

0.02

0.13

REF

0.225

0.065R

0.385

0.800

0.760

0.060R

0.424

0.900

0.125

0.005

0.165

0.250

0.005

0.010

0.005

0.001

0.005

REF

1.65R

9.78

20.32

19.30

1.52R

10.77

22.86

3.17

0.13

4.19

6.35

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 200 MHz

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Power Dissipation

220W

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

70V

±20V

DSS

GSS

30A

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 11/00

12 3 4

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