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CY7C4261V-15JCR PDF预览

CY7C4261V-15JCR

更新时间: 2024-02-01 08:52:38
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 先进先出芯片
页数 文件大小 规格书
16页 455K
描述
FIFO, 16KX9, Synchronous, CMOS, PQCC32, PLASTIC, LCC-32

CY7C4261V-15JCR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71Factory Lead Time:1 week
风险等级:8.52最长访问时间:10 ns
最大时钟频率 (fCLK):66.7 MHz周期时间:15 ns
JESD-30 代码:R-PQCC-J32JESD-609代码:e3
长度:13.97 mm内存密度:147456 bit
内存集成电路类型:OTHER FIFO内存宽度:9
湿度敏感等级:3功能数量:1
端子数量:32字数:16384 words
字数代码:16000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16KX9输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.004 A
子类别:FIFOs最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:20宽度:11.43 mm
Base Number Matches:1

CY7C4261V-15JCR 数据手册

 浏览型号CY7C4261V-15JCR的Datasheet PDF文件第2页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第3页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第4页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第5页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第6页浏览型号CY7C4261V-15JCR的Datasheet PDF文件第7页 
CY7C4281V/CY7C4291V CY7C4261V/CY7C4271V16K/32K/64K/128K  
x 9 Low-Voltage Deep Sync™ FIFOs  
CY7C4261V/CY7C4271V  
CY7C4281V/CY7C4291V  
16K/32K/64K/128K x 9 Low-Voltage Deep Sync™ FIFOs  
• Pin-compatible density upgrade to CY7C42X1V family  
Features  
• Pb-Free Packages Available  
• 3.3V operation for low power consumption and easy  
integration into low-voltage systems  
Functional Description  
• High-speed, low-power, first-in first-out (FIFO)  
memories  
The CY7C4261/71/81/91V are high-speed, low-power FIFO  
memories with clocked read and write interfaces. All are nine  
bits wide. The CY7C4261/71/81/91V are pin-compatible to the  
CY7C42x1V Synchronous FIFO family. Programmable  
features include Almost Full/Almost Empty flags. These FIFOs  
provide solutions for a wide variety of data buffering needs,  
including high-speed data acquisition, multiprocessor inter-  
faces, and communications buffering.  
• 16K × 9 (CY7C4261V)  
• 32K × 9 (CY7C4271V)  
• 64K × 9 (CY7C4281V)  
• 128K × 9 (CY7C4291V)  
• 0.35-micron CMOS for optimum speed/power  
These FIFOs have 9-bit input and output ports that are  
controlled by separate clock and enable signals. The input port  
is controlled by a free-running clock (WCLK) and two  
write-enable pins (WEN1, WEN2/LD).  
• High-speed 100-MHz operation (10-ns read/write cycle  
times)  
• Low power  
— ICC = 25 mA  
— ISB = 4 mA  
When WEN1 is LOW and WEN2/LD is HIGH, data is written  
into the FIFO on the rising edge of the WCLK signal. While  
WEN1 and WEN2/LD are held active, data is continually  
written into the FIFO on each WCLK cycle. The output port is  
controlled in a similar manner by a free-running read clock  
(RCLK) and two read enable pins (REN1, REN2). In addition,  
the CY7C4261/71/81/91V has an output enable pin (OE). The  
read (RCLK) and write (WCLK) clocks may be tied together for  
single-clock operation or the two clocks may be run indepen-  
dently for asynchronous read/write applications. Clock  
frequencies up to 100 MHz are achievable. Depth expansion  
is possible using one enable input for system control, while the  
other enable is controlled by expansion logic to direct the flow  
of data.  
• Fully asynchronous and simultaneous read and write  
operation  
• Empty, Full, and programmable Almost Empty and  
Almost Full status flags  
• Output Enable (OE) pin  
• Independent read and write enable pins  
• Supports free-running 50% duty cycle clock inputs  
• Width- Expansion capability  
• Pin-compatible 3.3V solutions for CY7C4261/71/81/91  
D0–8  
LogicBlock Diagram  
Pin Configuration  
PLCC  
Top View  
INPUT  
REGISTER  
4
3
2
1
32 31 30  
29  
WCLK  
WEN1WEN2/LD  
D
D
PAF  
PAE  
RS  
1
5
6
FLAG  
28  
27  
26  
0
WEN1  
WCLK  
WEN2/LD  
PROGRAM  
REGISTER  
CY7C4261V  
CY7C4271V  
CY7C4281V  
CY7C4291V  
7
8
9
WRITE  
GND  
REN1  
RCLK  
REN2  
OE  
V
CC  
25  
24  
23  
22  
21  
CONTROL  
Q
8
Q
7
10  
11  
12  
13  
EF  
Q
6
PAE  
PAF  
FF  
FLAG  
LOGIC  
Q
5
Dual Port  
RAM Array  
16K/32K  
14 15 16 17 18 19 20  
WRITE  
POINTER  
READ  
64K/128K  
x 9  
POINTER  
RESET  
LOGIC  
RS  
THREE-STATE  
READ  
CONTROL  
REGISTER  
OUTPUT  
OE  
Q0–8  
RCLK  
REN1 REN2  
Cypress Semiconductor Corporation  
Document #: 38-06013 Rev. *B  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Revised August 2, 2005  

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