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CY7C291A-25JCT

更新时间： 2024-01-13 22:06:06
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路可编程只读存储器OTP只读存储器
页数 文件大小 规格书
15页 358K
描述
OTP ROM, 2KX8, 25ns, CMOS, PQCC28, PLASTIC, LCC-28

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CY7C291A-25JCT 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：0.300 INCH, WINDOWED, CERDIP-24
针数：24Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.32.00.61
风险等级：5.31最长访问时间：25 ns
I/O 类型：COMMONJESD-30 代码：R-GDIP-T24
JESD-609代码：e0长度：31.877 mm
内存密度：16384 bit内存集成电路类型：UVPROM
内存宽度：8功能数量：1
端子数量：24字数：2048 words
字数代码：2000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：2KX8输出特性：3-STATE
封装主体材料：CERAMIC, GLASS-SEALED封装代码：WDIP
封装等效代码：DIP24,.3封装形状：RECTANGULAR
封装形式：IN-LINE, WINDOW并行/串行：PARALLEL
电源：5 V编程电压：12.5 V
认证状态：Not Qualified筛选级别：38535Q/M;38534H;883B
座面最大高度：5.08 mm最大待机电流：0.12 A
子类别：EPROMs最大压摆率：0.12 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
宽度：7.62 mm

CY7C291A-25JCT 数据手册

 浏览型号CY7C291A-25JCT的Datasheet PDF文件第2页浏览型号CY7C291A-25JCT的Datasheet PDF文件第3页浏览型号CY7C291A-25JCT的Datasheet PDF文件第4页浏览型号CY7C291A-25JCT的Datasheet PDF文件第5页浏览型号CY7C291A-25JCT的Datasheet PDF文件第6页浏览型号CY7C291A-25JCT的Datasheet PDF文件第7页 
1CY7C292A  
CY7C291A  
CY7C292A/CY7C293A  
2K x 8 Reprogrammable PROM  
identical, but are packaged in 300-mil (7C291A, 7C293A) and  
600-mil wide plastic and hermetic DIP packages (7C292A).  
The CY7C293A has an automatic power down feature which  
reduces the power consumption by over 70% when deselect-  
ed. The 300-mil ceramic package may be equipped with an  
erasure window; when exposed to UV light the PROM is  
erased and can then be reprogrammed. The memory cells uti-  
lize proven EPROM floating-gate technology and byte-wide in-  
telligent programming algorithms.  
Features  
•
•
•
Windowed for reprogrammability  
CMOS for optimum speed/power  
High speed  
— 20 ns (commercial)  
— 25 ns (military)  
The CY7C291A, CY7C292A, and CY7C293A are plug-in re-  
placements for bipolar devices and offer the advantages of  
lower power, reprogrammability, superior performance and  
programming yield. The EPROM cell requires only 12.5V for  
the supervoltage and low current requirements allow for gang  
programming. The EPROM cells allow for each memory loca-  
tion to be tested 100%, as each location is written into, erased,  
and repeatedly exercised prior to encapsulation. Each PROM  
is also tested for AC performance to guarantee that after cus-  
tomer programming the product will meet DC and AC specifi-  
cation limits.  
•
•
Low power  
— 660 mW (commercial and military)  
Low standby power  
— 220 mW (commercial and military)  
•
•
•
EPROM technology 100% programmable  
Slim 300-mil or standard 600-mil packaging available  
5V ±10% V , commercial and military  
CC  
•
•
•
TTL-compatible I/O  
A read is accomplished by placing an active LOW signal on  
Direct replacement for bipolar PROMs  
Capable of withstanding >2001V static discharge  
CS , and active HIGH signals on CS and CS . The contents  
1
2
3
of the memory location addressed by the address line (A  
−
0
A
) will become available on the output lines (O − O ).  
10  
0 7  
Functional Description  
The CY7C291A, CY7C292A, and CY7C293A are high-perfor-  
mance 2K-word by 8-bit CMOS PROMs. They are functionally  
Logic Block Diagram  
Pin Configurations  
A
0
DIP  
Top View  
O
7
LCC/PLCC (Opaque Only)  
Top View  
A
1
PROGRAM-  
MABLE  
ARRAY  
A
MULTI-  
PLEXER  
2
ROW  
O
6
V
A
1
2
3
4
5
6
7
8
9
CC  
24  
23  
22  
7
ADDRESS  
A
3
A
8
A
6
A
9
A
5
A
4
7C291A  
7C292A  
7C293A  
O
O
O
5
3
2 1 2827  
4
26  
25  
A
10  
A
21  
20  
19  
18  
17  
A
4
10  
A
A
5
5
6
7
8
9
4
CS  
CS  
CS  
A
3
1
24  
A
1
3
7C291A  
ADDRESS  
DECODER  
CS  
4
A
23  
22  
21  
20  
19  
2
A
6
2
2
A
2
CS  
3
A
1
CS  
A
3
1
A
7
A
NC  
0
A
0
O
O
7C293A  
7
NC  
O
0
O
7
3
10  
11  
A
8
O
6
O
0
O
1
O
2
6
16  
15  
14  
13  
1314151617 18  
12  
O
10  
11  
12  
5
COLUMN  
ADDRESS  
A
9
O
2
O
1
O
4
GND  
O
3
A
10  
POWER  
DOWN  
C291A-3  
C291A-2  
7C293A  
Window available on  
7C291A and 7C293A  
only.  
O
0
CS  
1
CS  
2
CS  
3
C291A-1  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
March 1986 – Revised May 1993  
•
408-943-2600  
1234567...15

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