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CY7C2265KV18-550BZXC PDF预览

CY7C2265KV18-550BZXC

更新时间: 2024-03-03 10:09:25
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英飞凌 - INFINEON 静态存储器
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描述
Synchronous SRAM

CY7C2265KV18-550BZXC 数据手册

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CY7C2263KV18/CY7C2265KV18  
Pin Definitions (continued)  
Pin Name  
I/O  
Pin Description  
DOFF  
Input  
PLL turn off active LOW. Connecting this pin to ground turns off the PLL inside the device. The timings  
in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin  
can be connected to a pull up through a 10 Kor less pull-up resistor. The device behaves in QDR I  
mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to  
167 MHz with QDR I timing.  
TDO  
Output  
Input  
Input  
Input  
N/A  
TDO pin for JTAG.  
TCK  
TCK pin for JTAG.  
TDI  
TDI pin for JTAG.  
TMS  
TMS pin for JTAG.  
NC  
Not connected to the die. Can be tied to any voltage level.  
Not connected to the die. Can be tied to any voltage level.  
Not connected to the die. Can be tied to any voltage level.  
Not connected to the die. Can be tied to any voltage level.  
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC  
NC/72M  
NC/144M  
NC/288M  
VREF  
N/A  
N/A  
N/A  
Input-  
reference measurement points.  
VDD  
VSS  
Power supply Power supply inputs to the core of the device.  
Ground  
Ground for the device.  
VDDQ  
Power supply Power supply inputs for the outputs of the device.  
Read Operations  
Functional Overview  
The CY7C2263KV18 is organized internally as four arrays of  
512 K × 18. Accesses are completed in a burst of four sequential  
18-bit data words. Read operations are initiated by asserting  
RPS active at the rising edge of the positive input clock (K). The  
address presented to the address inputs is stored in the read  
address register. Following the next two K clock rise, the  
corresponding lowest order 18-bit word of data is driven onto the  
Q[17:0] using K as the output timing reference. On the  
subsequent rising edge of K, the next 18-bit data word is driven  
onto the Q[17:0]. This process continues until all four 18-bit data  
words have been driven out onto Q[17:0]. The requested data is  
valid 0.45 ns from the rising edge of the input clock (K or K). To  
maintain the internal logic, each read access must be allowed to  
complete. Each read access consists of four 18-bit data words  
and takes two clock cycles to complete. Therefore, read  
accesses to the device can not be initiated on two consecutive  
K clock rises. The internal logic of the device ignores the second  
read request. Read accesses can be initiated on every other K  
clock rise. Doing so pipelines the data flow such that data is  
transferred out of the device on every rising edge of the input  
clocks (K and K).  
The CY7C2263KV18 and CY7C2265KV18 are synchronous  
pipelined burst SRAMs equipped with a read port and a write  
port. The read port is dedicated to read operations and the write  
port is dedicated to write operations. Data flows into the SRAM  
through the write port and flows out through the read port. These  
devices multiplex the address inputs to minimize the number of  
address pins required. By having separate read and write ports,  
the QDR II+ completely eliminates the need to “turn-around” the  
data bus and avoids any possible data contention, thereby  
simplifying system design. Each access consists of four 18-bit  
data transfers in the case of CY7C2263KV18, and four 36-bit  
data transfers in the case of CY7C2265KV18, in two clock  
cycles.  
These devices operate with a read latency of two and half cycles  
when DOFF pin is tied HIGH. When DOFF pin is set LOW or  
connected to VSS then device behaves in QDR I mode with a  
read latency of one clock cycle.  
Accesses for both ports are initiated on the positive input clock  
(K). All synchronous input and output timing are referenced from  
the rising edge of the input clocks (K and K).  
When the read port is deselected, the CY7C2263KV18 first  
completes the pending read transactions. Synchronous internal  
circuitry automatically tri-states the outputs following the next  
rising edge of the negative input clock (K). This enables for a  
seamless transition between devices without the insertion of wait  
states in a depth expanded memory.  
All synchronous data inputs (D[x:0]) pass through input registers  
controlled by the input clocks (K and K). All synchronous data  
outputs (Q[x:0]) outputs pass through output registers controlled  
by the rising edge of the input clocks (K and K) as well.  
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass  
through input registers controlled by the rising edge of the input  
clocks (K and K).  
Write Operations  
CY7C2263KV18 is described in the following sections. The  
same basic descriptions apply to CY7C2265KV18.  
Write operations are initiated by asserting WPS active at the  
rising edge of the positive input clock (K). On the following K  
clock rise the data presented to D[17:0] is latched and stored into  
Document Number: 001-57843 Rev. *L  
Page 6 of 32  

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