66
CY7C164
CY7C166
16K x 4 Static RAM
three-state drivers. The CY7C166 has an active LOW Output
Enable (OE) feature. Both devices have an automatic power-
down feature, reducing the power consumption by 65% when
deselected.
Features
• High speed
— 15 ns
Writing to the device is accomplished when the Chip Enable
(CE) and Write Enable (WE) inputs are both LOW (and the
Output Enable (OE) is LOW for the CY7C166). Data on the
four input/output pins (I/O0 through I/O3) is written into the
memory location specified on the address pins (A0 through
A13).
• Output enable (OE) feature (CY7C166)
• CMOS for optimum speed/power
• Low active power
— 633 mW
• Low standby power
Reading the device is accomplished by taking Chip Enable
(CE) LOW (and OE LOW for CY7C166), while Write Enable
(WE) remains HIGH. Under these conditions the contents of
the memory location specified on the address pins will appear
on the four data I/O pins.
— 110 mW
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The I/O pins stay in a high-impedance state when Chip Enable
(CE) is HIGH (or Output Enable (OE) is HIGH for CY7C166).
A die coat is used to insure alpha immunity.
The CY7C164 and CY7C166 are high-performance CMOS
static RAMs organized as 16,384 by 4 bits. Easy memory ex-
pansion is provided by an active LOW Chip Enable (CE) and
Logic Block Diagram
Pin Configurations
SOJ
Top View
DIP
Top View
A
V
A
V
CC
1
2
3
4
5
6
7
8
9
22
21
20
19
5
CC
5
1
24
A
A
A
A
4
A
3
6
4
6
2
3
4
23
22
21
20
19
18
17
A
A
3
A
7
7
A
8
A
A
A
2
A
1
8
2
A
A
1
A
18
17
16
15
9
9
5
6
7
8
9
10
11
12
7C164
A
A
A
A
A
A
A
A
7C164
A
A
0
10
11
10
11
0
I/O
I/O
I/O
I/O
NC
I/O
3
2
1
0
12
13
12
13
3
I/O
I/O
I/O
14
13
12
16
2
1
0
CE
NC
CE
GND
10
11
15
14
13
WE
INPUT BUFFER
GND
WE
C164–3
C164–2
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
I/O
3
DIP/SOJ
Top View
2
256 x 64 x 4
ARRAY
A
5
V
CC
1
2
3
24
23
22
I/O
I/O
1
A
6
A
4
A
A
3
7
0
A
4
5
6
7
A
8
21
20
19
18
17
2
A
A
1
9
A
A
A
A
7C166
POWER
DOWN
A
0
10
11
COLUMN
DECODER
NC
I/O
CE
12
13
8
3
I/O
I/O
I/O
9
16
15
14
13
2
1
0
WE
(OE)
(7C166 ONLY)
CE
OE
GND
10
11
12
WE
C166–1
C164–4
]
Selection Guide
7C164-15
7C166-15
7C164-20
7C166-20
7C164-25
7C166-25
7C164-35
7C166-35
Maximum Access Time (ns)
15
115
20
20
115
20
25
105
20
35
105
20
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05025 Rev. **
Revised August 24, 2001