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CY7C1615KV18-250BZXC PDF预览

CY7C1615KV18-250BZXC

更新时间: 2024-03-03 10:09:23
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英飞凌 - INFINEON 静态存储器
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32页 773K
描述
Synchronous SRAM

CY7C1615KV18-250BZXC 数据手册

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CY7C1613KV18/CY7C1615KV18  
Pin Definitions (continued)  
Pin Name  
I/O  
Pin Description  
DOFF  
Input  
PLL turn off Active low. Connecting this pin to ground turns off the PLL inside the device. The timings  
in the PLL turned off operation differs from those listed in this datasheet. For normal operation, this pin  
can be connected to a pull up through a 10 Kor less pull-up resistor. The device behaves in QDR I  
mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to  
167 MHz with QDR I timing.  
TDO  
TCK  
Output  
Input  
Input  
Input  
N/A  
Test data-out (TDO) pin for JTAG.  
Test clock (TCK) pin for JTAG.  
TDI  
Test data-in (TDI) pin for JTAG.  
TMS  
NC  
Test mode select (TMS) pin for JTAG.  
Not connected to the die. Can be tied to any voltage level.  
Not connected to the die. Can be tied to any voltage level.  
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC  
NC/288M  
VREF  
N/A  
Input-  
Reference measurement points.  
VDD  
Power  
Supply  
Power supply inputs to the core of the device.  
VSS  
Ground  
Ground for the device.  
VDDQ  
Power  
Supply  
Power supply inputs for the outputs of the device.  
CY7C1613KV18 is described in the following sections. The  
same basic descriptions apply to CY7C1615KV18.  
Functional Overview  
The CY7C1613KV18, CY7C1615KV18 are synchronous  
pipelined burst SRAMs with a read port and a write port. The read  
port is dedicated to read operations and the write port is  
dedicated to write operations. Data flows into the SRAM through  
the write port and flows out through the read port. These devices  
multiplex the address inputs to minimize the number of address  
pins required. By having separate read and write ports, the QDR  
II completely eliminates the need to turn-around the data bus and  
avoids any possible data contention, thereby simplifying system  
design. Each access consists of four 18-bit data transfers in the  
case of CY7C1613KV18, and four 36-bit data transfers in the  
case of CY7C1615KV18 in two clock cycles.  
Read Operations  
The CY7C1613KV18 is organized internally as four arrays of  
2 M × 18. Accesses are completed in a burst of four sequential  
18-bit data words. Read operations are initiated by asserting  
RPS active at the rising edge of the positive input clock (K). The  
address presented to the address inputs is stored in the read  
address register. Following the next  
K clock rise, the  
corresponding lowest order 18-bit word of data is driven onto the  
Q[17:0] using C as the output timing reference. On the  
subsequent rising edge of C, the next 18-bit data word is driven  
onto the Q[17:0]. This process continues until all four 18-bit data  
words have been driven out onto Q[17:0]. The requested data is  
valid 0.45 ns from the rising edge of the output clock (C or C, or  
K or K when in single clock mode). To maintain the internal logic,  
each read access must be allowed to complete. Each read  
access consists of four 18-bit data words and takes two clock  
cycles to complete. Therefore, read accesses to the device can  
not be initiated on two consecutive K clock rises. The internal  
logic of the device ignores the second read request. Read  
accesses can be initiated on every other K clock rise. Doing so  
pipelines the data flow such that data is transferred out of the  
device on every rising edge of the output clocks (C and C, or K  
and K when in single clock mode).  
This device operates with a read latency of one and half cycles  
when DOFF pin is tied high. When DOFF pin is set low or  
connected to VSS then device behaves in QDR I mode with a  
read latency of one clock cycle.  
Accesses for both ports are initiated on the positive input clock  
(K). All synchronous input timing is referenced from the rising  
edge of the input clocks (K and K) and all output timing is  
referenced to the output clocks (C and C, or K and K when in  
single clock mode).  
All synchronous data inputs (D[x:0]) pass through input registers  
controlled by the input clocks (K and K). All synchronous data  
outputs (Q[x:0]) pass through output registers controlled by the  
rising edge of the output clocks (C and C, or K and K when in  
single clock mode).  
When the read port is deselected, the CY7C1613KV18 first  
completes the pending read transactions. Synchronous internal  
circuitry automatically tristates the outputs following the next  
rising edge of the positive output clock (C). This enables for a  
seamless transition between devices without the insertion of wait  
states in a depth expanded memory.  
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass  
through input registers controlled by the rising edge of the input  
clocks (K and K).  
Document Number: 001-44273 Rev. *L  
Page 6 of 32  

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