Datasheet > 存储 > SRAM> CY7C1386DV25-167BZXC

CY7C1386DV25-167BZXC

更新时间： 2024-02-20 23:02:38

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
30页	1165K
描述
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM

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替代型号

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CY7C1386DV25-167BZXC 数据手册

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CY7C1386DV25, CY7C1386FV25

CY7C1387DV25, CY7C1387FV25

Document History Page

DocumentTitle:CY7C1386DV25/CY7C1387DV25/CY7C1386FV25/CY7C1387FV2518-Mbit(512Kx36/1Mx18)Pipelined

DCD Sync SRAM

Document Number: 38-05548

Orig. of

Change

REV.

ECN NO. Issue Date

Description of Change

254550

288531

See ECN

RKF

New data sheet

SYT

Edited description under “IEEE 1149.1 Serial Boundary Scan (JTAG)” for

non-compliance with 1149.1

Removed 225 Mhz Speed Bin

Added Pb-free information for 100-Pin TQFP, 119 BGA and 165 FBGA

Packages

Added comment of ‘Pb-free BG packages availability’ below the Ordering

Information

326078

See ECN

PCI

Address expansion pins/balls in the pinouts for all packages are modified as

per JEDEC standard

Added description on EXTEST Output Bus Tri-State

Changed description on the Tap Instruction Set Overview and Extest

Changed Device Width (23:18) for 119-BGA from 000110 to 101110

Added separate row for 165 -FBGA Device Width (23:18)

Changed Θ_JAand Θ_JCfor TQFP Package from 31 and 6 °C/W to 28.66 and

4.08 °C/W respectively

Changed Θ_JAand Θ_JCfor BGA Packagefrom 45 and 7 °C/W to 23.8 and 6.2

°C/W respectively

Changed Θ_JAand Θ_JCfor FBGA Package from 46 and 3 °C/W to 20.7 and

4.0 °C/W respectively

Modified V_OL,V_OHtest conditions

Removed shading on DC Table for 200 MHz speed bin

Removed comment of ‘Pb-free BG packages availability’ below the Ordering

Information

418125

See ECN

NXR

Changed address of Cypress Semiconductor Corporation on Page# 1 from

“3901 North First Street” to “198 Champion Court”

Changed the description of I_Xfrom Input Load Current to Input Leakage

Current on page# 18

Changed the I_Xcurrent values of MODE on page # 18 from –5 µA and 30 µA

to –30 µA and 5 µA

Changed the I_Xcurrent values of ZZ on page # 18 from –30 µA and 5 µA

to °5 µA and 30 µA

Changed V_IH< V_DDto V_IH< V_DDon page # 18

Updated Ordering Information Table

475009

793579

See ECN

VKN

Converted from Preliminary to Final.

Added the Maximum Rating for Supply Voltage on V_DDQRelative to GND

Changed t_TH, t_TLfrom 25 ns to 20 ns and t_TDOVfrom 5 ns to 10 ns in TAP

AC Switching Characteristics table.

Updated the Ordering Information table.

Added Part numbers CY7C1386FV25 and CY7C1387FV25

Added footnote# 3 regarding Chip Enable

Updated Ordering Information table

Document Number: 38-05548 Rev. *E

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STM32F103C8T6 替代型号

型号	品牌	替代类型	描述	数据表

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