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CY7C1386D-200AC PDF预览

CY7C1386D-200AC

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
30页 509K
描述
Cache SRAM, 512KX36, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

CY7C1386D-200AC 数据手册

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CY7C1386D  
CY7C1387D  
PRELIMINARY  
Pin Definitions  
Name  
I/O  
Description  
Address Inputs used to select one of the address locations. Sampled at the  
A0, A1, A  
Input-  
[2]  
Synchronous  
rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3  
are sampled active. A1: A0 are fed to the two-bit counter.  
.
BWA, BWB  
BWC, BWD  
Input-  
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes  
Synchronous  
to the SRAM. Sampled on the rising edge of CLK.  
GW  
Input-  
Global Write Enable Input, active LOW. When asserted LOW on the rising edge  
of CLK, a global write is conducted (ALL bytes are written, regardless of the values  
on BWX and BWE).  
Synchronous  
BWE  
CLK  
CE1  
Input-  
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This  
Synchronous  
signal must be asserted LOW to conduct a byte write.  
Input-  
Clock  
Clock Input. Used to capture all synchronous inputs to the device. Also used to  
increment the burst counter when ADV is asserted LOW, during a burst operation.  
Input-  
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in  
conjunction with CE2 and CE3[2] to select/deselect the device. ADSP is ignored if  
CE1 is HIGH. CE1 is sampled only when a new external address is loaded.  
Synchronous  
[2]  
CE2  
Input-  
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in  
conjunction with CE1 and CE3[2] to select/deselect the device. CE2 is sampled only  
when a new external address is loaded.  
Synchronous  
[2]  
CE3  
Input-  
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in  
Synchronous  
conjunction with CE andCE to select/deselect the device.  
Not connected for BGA.  
1
Where referenced, CE3[2] is2assumed active throughout this document for BGA.  
CE3 is sampled only when a new external address is loaded.  
OE  
Input-  
Output Enable, asynchronous input, active LOW. Controls the direction of the  
I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, DQ  
pins are tri-stated, and act as input data pins. OE is masked during the first clock of  
a read cycle when emerging from a deselected state.  
Asynchronous  
ADV  
Input-  
Advance Input signal, sampled on the rising edge of CLK, active LOW. When  
Synchronous  
asserted, it automatically increments the address in a burst cycle.  
ADSP  
Input-  
Address Strobe from Processor, sampled on the rising edge of CLK, active  
LOW. When asserted LOW, addresses presented to the device are captured in the  
address registers. A1: A0 are also loaded into the burst counter. When ADSP and  
ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is  
deasserted HIGH.  
Synchronous  
ADSC  
Input-  
Address Strobe from Controller, sampled on the rising edge of CLK, active  
LOW. When asserted LOW, addresses presented to the device are captured in the  
address registers. A1: A0 are also loaded into the burst counter. When ADSP and  
ADSC are both asserted, only ADSP is recognized.  
Synchronous  
ZZ  
Input-  
ZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a  
non-time-critical “sleep” condition with data integrity preserved. For normal  
operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down.  
Asynchronous  
I/O-  
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that  
is triggered by the rising edge of CLK. As outputs, they deliver the data contained  
in the memory location specified by the addresses presented during the previous  
DQs, DQPX  
Synchronous  
cycle. The direction of the pins is controlled by OE. When OE  
clock rise of the read  
is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are  
placed in a tri-state condition.  
VDD  
VSS  
Power Supply  
Ground  
Power supply inputs to the core of the device.  
Ground for the core of the device.  
Ground for the I/O circuitry.  
VSSQ  
I/O Ground  
Document #: 38-05545 Rev. **  
Page 6 of 30  

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