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CY7C1041BNV33L-12ZXC PDF预览

CY7C1041BNV33L-12ZXC

更新时间: 2024-02-09 08:25:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 413K
描述
256K x 16 Static RAM

CY7C1041BNV33L-12ZXC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.79
Is Samacsys:N最长访问时间:12 ns
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:18.415 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.194 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:10.16 mmBase Number Matches:1

CY7C1041BNV33L-12ZXC 数据手册

 浏览型号CY7C1041BNV33L-12ZXC的Datasheet PDF文件第2页浏览型号CY7C1041BNV33L-12ZXC的Datasheet PDF文件第3页浏览型号CY7C1041BNV33L-12ZXC的Datasheet PDF文件第4页浏览型号CY7C1041BNV33L-12ZXC的Datasheet PDF文件第5页浏览型号CY7C1041BNV33L-12ZXC的Datasheet PDF文件第6页浏览型号CY7C1041BNV33L-12ZXC的Datasheet PDF文件第7页 
1CY7C1041BNV33  
CY7C1041BNV33  
256K x 16 Static RAM  
Features  
Functional Description  
• High speed  
The CY7C1041BNV33 is a high-performance CMOS Static  
RAM organized as 262,144 words by 16 bits.  
— tAA = 12 ns  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
written into the location specified on the address pins (A0  
through A17). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O8 through I/O15) is written into the location  
specified on the address pins (A0 through A17).  
• Low active power  
— 612 mW (max.)  
• Low CMOS standby power (Commercial L version)  
— 1.8 mW (max.)  
• 2.0V Data Retention (660 µW at 2.0V retention)  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O8 to I/O15. See  
the truth table at the back of this data sheet for a complete  
description of read and write modes.  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
The CY7C1041BNV33 is available in a standard 44-pin  
400-mil-wide body width SOJ and 44-pin TSOP II package  
with center power and ground (revolutionary) pinout.  
Logic Block Diagram  
Pin Configuration  
SOJ  
INPUT BUFFER  
TSOP II  
Top View  
A
0
44  
1
A
A
17  
0
A
1
43  
42  
41  
40  
39  
38  
A
A
16  
2
3
4
5
6
1
A
2
A
15  
A
2
I/O0 – I/O7  
I/O8 – I/O15  
256K x 16  
ARRAY  
A
3
A
OE  
BHE  
BLE  
3
A
4
A
1024 x 4096  
4
A
5
CE  
A
6
I/O  
I/O  
7
0
15  
A
7
37  
36  
35  
34  
33  
I/O  
I/O  
8
I/O  
I/O  
A
1
2
14  
13  
12  
8
9
10  
11  
12  
13  
I/O  
V
SS  
I/O  
3
CC  
V
SS  
COLUMN  
DECODER  
V
V
CC  
32  
I/O  
I/O  
I/O  
4
5
6
7
11  
10  
31  
30  
29  
28  
I/O  
I/O  
I/O  
14  
15  
16  
I/O  
9
8
I/O  
WE 17  
NC  
BHE  
18  
27  
26  
25  
WE  
CE  
OE  
A
14  
A
5
19  
A
A
6
13  
A
20  
21  
22  
A
7
12  
BLE  
A
11  
A
24  
23  
8
9
A
A
10  
Cypress Semiconductor Corporation  
Document #: 001-06434 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 1, 2006  
[+] Feedback  

CY7C1041BNV33L-12ZXC 替代型号

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