Datasheet > CY14V116N-BZ30XI

CY14V116N-BZ30XI

更新时间： 2024-01-17 16:46:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
25页	1299K
描述
16-Mbit (1024 K Ã 16) nvSRAM

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中文翻译

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数据手册

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CY14V116N-BZ30XI 数据手册

CY14V116N

16-Mbit (1024 K × 16) nvSRAM

■ Industrial temperature: –40 C to +85 C

Features

■ 165-ball fine-pitch ball grid array (FBGA) package

■ Restriction of hazardous substances (RoHS) compliant

■ 16-Mbit nonvolatile static random access memory (nvSRAM)

❐ 30-ns and 45-ns access times

❐ Logically organized as 1024 K × 16

❐ Hands-off automatic STORE on power-down with only a

small capacitor

Functional Description

The Cypress CY14V116N is a fast SRAM, with a nonvolatile

element in each memory cell. The memory is organized as

1024 K words of 16 bits each. The embedded nonvolatile

elements incorporate QuantumTrap technology, producing the

world’s most reliable nonvolatile memory. The SRAM can be

read and written an infinite number of times. The nonvolatile data

residing in the nonvolatile elements do not change when data is

written to the SRAM. Data transfers from the SRAM to the

nonvolatile elements (the STORE operation) takes place

automatically at power-down. On power-up, data is restored to

the SRAM (the RECALL operation) from the nonvolatile memory.

Both the STORE and RECALL operations are also available

under software control.

❐ STORE to QuantumTrap nonvolatile elements is initiated by

software, device pin, or AutoStore on power-down

❐ RECALL to SRAM initiated by software or power-up

■ High reliability

❐ Infinite read, write, and RECALL cycles

❐ 1 million STORE cycles to QuantumTrap

❐ Data retention: 20 years

■ Sleep mode operation

■ Low power consumption

❐ Active current of 75 mA at 45 ns

❐ Standby mode current of 650 A

❐ Sleep mode current of 10 A

■ Operating voltage

❐ Core V_CC= 2.7 V to 3.6 V; I/O V_CCQ= 1.65 V to 1.95 V

For a complete list of related documentation, click here.

Logic Block Diagram

CAP

CCQ

POWER CONTROL

SLEEP MODE

CONTROL

QUANTUMTRAP

4096 X 4096

STORE / RECALL

CONTROL

HSB

STORE

RECALL

STATIC RAM

ARRAY

4096 X 4096

SOFTWARE

DETECT

-A

[1]

BLE

BHE

COLUMN IO

DQ -DQ

COLUMN DECODER

-A

Note

1. In this datasheet, CE refers to the internal logical combination of CE and CE , such that when CE is LOW and CE is HIGH, CE is LOW. For all other cases CE is HIGH.

Cypress Semiconductor Corporation

Document #: 001-75791 Rev. *H

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 7, 2015

12 3 4 5 6 7...25

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