Maximum Ratings at TA = 25°CNotes ꢀ&3
DC Forward Current
CxxxRT200-Sxxxx
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
Storage Temperature Range
-40°C to +100°C
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, IF = 5 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.0
Max.
Max.
Typ.
24
C460RT200-Sxxxx
C470RT200-Sxxxx
C527RT200-Sxxxx
2.7
2.7
2.7
3.3
3.3
3.4
1
1
1
3.0
25
3.1
40
Mechanical Specifications
Description
CxxxRT200-Sxxxx
Dimension
Tolerance
± 35
P-N Junction Area (μm)
Top Area (μm)
150 x 150
200 x 200
170 x 170
95
± 35
Bottom Area (μm)
± 35
Chip Thickness (μm)
± 15
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Width (μm)
112
± 20
1.0
± 0.5
± 10
90
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are
the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products
shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000
epoxy). Dominant wavelength measurements taken using Illuminance E.
4. Specifications are subject to change without notice.
Cree, Inc.
4600 Silicon Drive
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
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