Datasheet > CXH49SFB04915H0PESZZ

CXH49SFB04915H0PESZZ

更新时间： 2024-02-07 11:01:18

品牌	Logo	应用领域
京瓷/艾维克斯 - KYOCERA AVX		晶体
页数	文件大小	规格书
27页	1671K
描述
Crystal Units Surface Mount Type

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CXH49SFB04915H0PESZZ 技术参数

Handling Notes

The oscillation start-up conditions are described as



R_L R

and in order to oscillate the crystal unit accurately, it must be designed such that the negative resistance of the oscillation

circuit becomes bigger comparing with the resonance resistance value at the time of loading. This ratio is called oscillation

margin degree M_OSCand it is one of critical factors when designing the oscillation circuit and is described as below.

For oscillation circuit designing conditions, it is recommended that an oscillation circuit be designed using a negative

resistance of a value five to ten times or more larger than RL calculated from the resonance resistance specification value.



_OSC R / R_L 5

In a steady oscillation state, the load resonance resistance is given as follows:



R_L R

The mutual conductance of the oscillation circuit decreases after the oscillation has started to continuously compensate for

the power loss due to the load resonance resistance of the crystal unit, which continues oscillation.

The frequency condition is given as follows:

X_L X_C, X_L X_C 0

As shown in the following figure, the reactance of the crystal unit varies to a value matching the load capacitance of the

oscillation circuit C_L X_C. Thus an oscillation frequency is determined.

f_p

f_s

f_L

f_s: Series resonance frequency

f_L: Load resonance frequency

f_p: Parallel resonance frequency

Frequency



–1/ C_L

–

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