Datasheet > CTS05S30

CTS05S30

更新时间： 2024-10-03 14:56:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	151K
描述
20 V/0.5 A Schottky Barrier Diode, SOD-882(CST2)

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CTS05S30 数据手册

CTS05S30

Schottky Barrier Diode Silicon Epitaxial

CTS05S30

1. Applications

•

High-Speed Switching

2. Packaging and Internal Circuit

1: Cathode

2: Anode

CST2

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Peak reverse voltage

Reverse voltage

VRM

0.5

Average rectified current

Non-repetitive peak forward surge current

Junction temperature

(Note 1)

(Note 2)

IFSM

125



Storage temperature

Tstg

-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Note 2: Measured with a 10 ms pulse.

Start of commercial production

2013-07

2014-04-04

Rev.3.0

12 3 4 5

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