CTL0422PS-R3
P-Channel Enhancement MOSFET
Features
Description
The CTL0422PS-R3 is the P-Channel logic enhancement
Drain-Source Breakdown Voltage VDSS -20 V
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching and low in-line power
loss are needed in a very small outline surface mount
package.
Drain-Source On-Resistance
RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A
RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A
RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A
Continuous Drain Current at TC=25
℃ID = -4.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Package Outline
Schematic
Drain
Drain
Gate
Gate
Source
Source
CT Micro
Rev 1
Proprietary & Confidential
Page 1
Nov, 2013