5秒后页面跳转
CTL0422PS-R3 PDF预览

CTL0422PS-R3

更新时间: 2022-02-26 14:47:50
品牌 Logo 应用领域
CTMICRO /
页数 文件大小 规格书
11页 903K
描述
P-Channel Enhancement MOSFET

CTL0422PS-R3 数据手册

 浏览型号CTL0422PS-R3的Datasheet PDF文件第2页浏览型号CTL0422PS-R3的Datasheet PDF文件第3页浏览型号CTL0422PS-R3的Datasheet PDF文件第4页浏览型号CTL0422PS-R3的Datasheet PDF文件第5页浏览型号CTL0422PS-R3的Datasheet PDF文件第6页浏览型号CTL0422PS-R3的Datasheet PDF文件第7页 
CTL0422PS-R3  
P-Channel Enhancement MOSFET  
Features  
Description  
The CTL0422PS-R3 is the P-Channel logic enhancement  
Drain-Source Breakdown Voltage VDSS -20 V  
mode power field effect transistors are produced using  
high cell density, DMOS trench technology. This high  
density process is especially tailored to minimize on-state  
resistance. These devices are particularly suited for low  
voltage application such as cellular phone and notebook  
computer power management and other battery powered  
circuits where high-side switching and low in-line power  
loss are needed in a very small outline surface mount  
package.  
Drain-Source On-Resistance  
RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A  
RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A  
RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A  
Continuous Drain Current at TC=25  
ID = -4.0A  
Advanced high cell density Trench Technology  
RoHS Compliance & Halogen Free  
Applications  
Power Management  
Lithium Ion Battery  
Package Outline  
Schematic  
Drain  
Drain  
Gate  
Gate  
Source  
Source  
CT Micro  
Rev 1  
Proprietary & Confidential  
Page 1  
Nov, 2013  

与CTL0422PS-R3相关器件

型号 品牌 描述 获取价格 数据表
CTL0432PS-R3 CTMICRO P-Channel Enhancement MOSFET

获取价格

CTL0433PS-R3 CTMICRO P-Channel Enhancement MOSFET

获取价格

CTL043PS01-R3 CTMICRO P-Channel Enhancement MOSFET

获取价格

CTL046PS02E-R3 CTMICRO P-Channel Enhancement MOSFET

获取价格

CTL0472PS-R3 CTMICRO P-Channel Enhancement MOSFET

获取价格

CTL0502NS-R3 CTMICRO N-Channel Enhancement MOSFET

获取价格