Datasheet > CSB631KF

CSB631KF

更新时间： 2024-09-20 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	29K
描述
TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1A I(C) \| TO-126

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中文翻译

获取价格

数据手册

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CSB631KF 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

CSB631, CSB631K

TO-126 (SOT-32) Plastic Package

CSD600, CSD600K

CSB631, 631K

CSD600, 600K

PNP PLASTIC POWER TRANSISTORS

NPN PLASTIC POWER TRANSISTORS

Low frequency Power Amplifier and Medium Speed Switching Applications

PIN CONFIGURATION

1. EMITTER

2. COLLECTOR

3. BASE

ALL DIMENSIONS IN MM

ABSOLUTE MAXIMUM RATINGS

631

600

max. 100

max.

631K

600K

120 V

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current

CBO

CEO

1.0

8.0

Total power dissipation up to T = 25°C

max.

Junction temperature

max.

150

°C

Collector-emitter saturation voltage

= 0.5 A; I = 50 mA

CEsat

max.

0.4

D.C. current gain

= 50 mA; V

= 5 V

min.

max.

320

RATINGS (at T =25°C unless otherwise specified)

Limiting values

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

max. 100

120 V

CBO

CEO

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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