Silicon N-Channel Power MOSFET
CS6N120 AKR-G
R
○
General Description:
VDSS
1200
6
V
CS6N120 AKR-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-247
which accords with the RoHS standard.
ID
A
W
Ω
PD (TC=25℃)
RDS(ON)Typ
205
2.3
Features:
Fast Switching
Low ON Resistance(Rdson≤2.9Ω)
Low Gate Charge (Typical Data:13.1 nC)
Low Reverse transfer capacitances(Typical:.2.3 pF)
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Electric welder、Inverter.
Absolute(TJ= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
1200
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
6
ID
3.7
A
a1
24
A
IDM
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
102
mJ
V/ns
W
EAS
a3
5.0
dv/dt
Power Dissipation
205
1.6
PD
Derating Factor above 25°C
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
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2022V01