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CS48N18 PDF预览

CS48N18

更新时间: 2024-09-29 12:56:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
5页 784K
描述
70V,158A N-Channel Trench Process Power MOSFET

CS48N18 数据手册

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CS48N18  
Pb Free Plating Product  
General Description  
®
CS48N18  
70V,158A N-Channel Trench Process Power MOSFET  
CS48N18  
The CS48N18 is N-channel MOS Field Effect Transistor  
designed for high current switching applications. Rugged EAS  
capability and ultra low RDS(ON) is suitable for PWM, load  
switching especially for E-Bike controller applications.  
(TO-220 HeatSink)  
S
D
G
Features  
VDS=70VID=158A@ VGS=10V;  
RDS(ON)<4.2mΩ @ VGS=10V  
Special Designed for E-Bike Controller Application  
Ultra Low On-Resistance  
Schematic Diagram  
High UIS and UIS 100% Test  
Application  
VDSS = 70V  
IDSS = 158A  
48V E-Bike Controller Applications  
Hard Switched and High Frequency Circuits  
Uninterruptible Power Supply  
RDS(ON) = 3.5mΩ  
Table 1. Absolute Maximum Ratings (TA=25)  
Symbol  
Parameter  
Value  
Unit  
V
70  
±25  
158  
Drain-Source Voltage (VGS=0V)  
VDS  
V
VGS  
Gate-Source Voltage (VDS=0V)  
Drain Current (DC) at Tc=25  
Drain Current (DC) at Tc=100℃  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
dv/dt  
PD  
110  
A
(Note 1)  
632  
A
Drain Current-Continuous@ Current-Pulsed  
Peak Diode Recovery Voltage  
Maximum Power Dissipation(Tc=25)  
Derating Factor  
30  
V/ns  
W
231  
1.54  
W/℃  
mJ  
Single Pulse Avalanche Energy (Note 2)  
1300  
-55 To 175  
EAS  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature  
2.EAS condition:T =25,VDD=33V,VG=10V,ID=72.5A  
J
Page 1/5  
http://www.thinkisemi.com/  
Rev.05  
© 2006 Thinki Semiconductor Co.,Ltd.  

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