CS10N50 A0R
R
○
Electrical Characteristics(TJ= 25℃ unless otherwise specified):
OFF Characteristics
Rating
Typ.
--
Unit
Parameter
Test Conditions
Symbol
Min.
500
--
Max.
--
s
VGS=0V, ID=250µA
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
V
VDSS
ID=250uA,Reference25℃
0.6
--
V/℃
µA
µA
nA
ΔBVDSS/ΔTJ
VDS =500V, VGS= 0V,
TJ = 25℃
VDS =400V, VGS= 0V,
TJ = 125℃
--
--
--
--
--
1
Drain to Source Leakage Current
IDSS
--
100
100
-100
VGS =+30V
VGS =-30V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
IGSS(F)
IGSS(R)
--
nA
--
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
--
Typ. Max.
VGS=10V,ID=5A
Drain-to-Source On-Resistance
Gate Threshold Voltage
RDS(ON)
VGS(TH)
0.5 0.75
Ω
VDS = VGS, ID = 250µA
2.0
--
4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Rating
Typ.
10
Parameter
Test Conditions
Symbol
Units
S
Min.
--
Max.
--
VDS=15V, ID =5A
Forward Transconductance
Input Capacitance
gfs
Ciss
Coss
Crss
--
1620
154
--
VGS = 0V VDS = 25V
f = 1.0MHz
Output Capacitance
--
--
pF
Reverse Transfer Capacitance
--
8.4
--
Resistive Switching Characteristics
Rating
Typ.
26
Parameter
Test Conditions
Symbol
Units
ns
Min.
--
Max.
--
Turn-on Delay Time
Rise Time
td(ON)
tr
td(OFF)
tf
--
20
--
ID =10A VDD = 250V
RG =10Ω
Turn-Off Delay Time
Fall Time
--
52
--
--
21
--
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
--
32
--
ID =10A VDD =400V
VGS = 10V
Qgs
Qgd
--
7.9
12
--
nC
--
--
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2019V01