Datasheet > CS10N65A8R

CS10N65A8R

更新时间： 2024-03-03 10:09:19

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	267K
描述
TO-220

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CS10N65A8R 数据手册

Silicon N-Channel Power MOSFET

○

CS10N65 A8R

General Description：

V_DSS

650

CS10N65 A8R, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

130

0.86

Ω

l Fast Switching

l Low ON Resistance(Rdson≤1.0Ω)

l Low Gate Charge (Typical Data:32nC)

l Low Reverse transfer capacitances(Typical:7pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

650

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

6.3

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

500

V/ns

E_AS

5.0

dv/dt

130

1.04

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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