Datasheet > CS01N60ASRD-G

CS01N60ASRD-G

更新时间： 2024-10-02 15:19:19

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	455K
描述
SOT-23

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CS01N60ASRD-G 数据手册

Silicon N-Channel Power MOSFET

CS01N60 ASRD-G

○

General Description：

V_DSS

600

CS01N60 ASRD-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is SOT-23,

which accords with the RoHS standard.

I_D

0.04

0.5

P_D(T_A=25℃)

R_DS(ON)Typ

Ω

160

Features：

l Fast Switching

l Low ON Resistance(Rdson≤500Ω)

l Low Gate Charge (Typical Data:3.1nC)

l Low Reverse transfer capacitances(Typical:1.3pF)

l Halogen Free

Applications：

TV power.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current

0.04

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

0.02

0.16

I_DM

Gate-to-Source Voltage

V_GS

±20

Peak Diode Recovery dv/dt

5.0

0.5

V/ns

dv/dt

Power Dissipation (TA=25°C)

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating Junction and Storage Temperature Range

P_D

V_ESD(G-S)

T_J，T_stg

2000

150，–55 to 150

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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