CRSM076N04N2Z
华润微电子(重庆)有限公司
SkyMOS2 N-MOSFET 40V, 5.8mΩ, 50A
Features
Product Summary
VDS
40V
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance RDS(on)
• Excellent QgxRDS(on) product(FOM)
• AEC-Q101 Qualified
RDS(on).typ
ID
5.8mΩ
50A
100% DVDS Tested
100% Avalanche Tested
Applications
• DCDC Converter
• Switching applications
• UPS (Uninterrupible Power Supplies)
CRSM076N04N2Z
Package Marking and Ordering Information
Part #
Marking
Package
DFN5*6
Packing
Reel Size Tape Width
Qty
CRSM076N04N2Z
076N04N2Z
Tape&reel
N/A
N/A
4000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
40
V
Continuous drain current
TC = 25°C (Silicon limit)
TC = 25°C (Package limit)
TC = 100°C (Silicon limit)
50
50
ID
A
35
Pulsed drain current (TC = 25°C, tp limited by Tjmax
Avalanche energy, single pulse (IAS = 20A, Rg=25Ω)[1]
)
ID pulse
EAS
200
60
A
mJ
V
VGS
Gate-Source voltage
±20
31
Power dissipation (TC = 25°C)
Ptot
W
Tj , T stg
Operating junction and storage temperature
-55...+175
260
°C
°C
Soldering temperature, wave soldering only allowed at leads (1.6mm
from case for 10s)
Tsold
※. Notes:
EAS is tested at starting Tj = 25℃, L = 0.3mH, IAS =20A, VGS = 10V.
Rev1.0
©China Resources Microelectronics (Chongqing) Limited
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