Datasheet > CRSM100N15N3Z

CRSM100N15N3Z

更新时间： 2024-04-09 19:00:58

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	1382K
描述
PDFN5×6

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数据手册

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CRSM100N15N3Z 数据手册

CRSM100N15N3Z

SkyMOS3 N-MOSFET 150V, 9.5mΩ, 75A

Features

Product Summary

V_DS

150V

9.5mΩ

75A

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on)@10V typ}

I_D

100% Avalanche Tested

100% DVDS Tested

Applications

• Synchronous Rectification for AC/DC Quick Charger

• Battery management

• UPS (Uninterrupible Power Supplies)

CRSM100N15N3Z

Package Marking and Ordering Information

Part #

Marking

Package

DFN5*6 Rib Tape&Reel

Reel Size

Tape Width

N/A

Qty

Packing

5000/4000p

CRSM100N15N3Z

100N15N3Z

N/A

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

150

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 100°C (Silicon limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

300

225

Avalanche energy, single pulse (Ias=30A, Rg=25Ω)

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C )

P_tot

128

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

Rev1.0

©China Resources Microelectronics (Chongqing) Limited

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