Datasheet > CRSQ073N15N

CRSQ073N15N

更新时间： 2024-04-09 19:03:01

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	1385K
描述
TO-247

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CRSQ073N15N 数据手册

CRSQ073N15N

SkyMOS1 N-MOSFET 150V, 6.2mΩ, 140A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

150V

• Uses CRM(CQ) advanced SkyMOS1 technology

• Extremely low on-resistance RDS(on)

• Excellent QgxRDS(on) product(FOM)

• Qualified according to JEDEC criteria

R_DS(on)

I_D

6.2mΩ

140A

100% Avalanche Tested

100% DVDS Tested

Applications

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRSQ073N15N

Package Marking and Ordering Information

MARKING

流通码

Package

TO-247

Reel Size

N/A

Tape Width

N/A

Qty

Packing

Tube

30&25pcs

CRSQ073N15N

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

150

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

140

180

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

560

400

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)^[1]

Gate-Source voltage

V_GS

±15

Power dissipation (T_C= 25°C)

P_tot

298

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 40A, Vgs=10V.

Rev1.0

©China Resources Microelectronics (Chongqing) Limited

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