CRSQ023N10N4Z
华润微电子(重庆)有限公司
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ2.2mꢂ,ꢀ250A
Features
Product Summary
VDS
100V
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS4ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀRDS(on)
•ꢀExcellentꢀQgxRDS(on)ꢀproduct(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
RDS(on).typ
IDꢀ
2.2mꢂ
250A
100% DVDS Tested
100% Avalanche Tested
Applications
ꢀ•ꢀMotorꢀcontrolꢀandꢀdrive
ꢀ•ꢀBatteryꢀmanagementꢀSystem
ꢀ•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
Package Marking and Ordering Information
Partꢀ#
Marking
Package
TOꢁ247ꢀ
Packing
Tube
ReelꢀSize TapeꢀWidth
Qty
CRSQ023N10N4Z CRSQ023N10N4Z
N/A
N/A
25/30pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drainꢁsourceꢀvoltage
100
V
Continuousꢀdrainꢀcurrent
TCꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)
TCꢀ=ꢀ25°Cꢀ(Packageꢀlimit)
TCꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)
270ꢀ
250ꢀ
ID
A
170ꢀ
Pulsedꢀdrainꢀcurrentꢀ(TCꢀ=ꢀ25°C,ꢀtpꢀlimitedꢀbyꢀTjmax
)
IDꢀpulse
EAS
1000ꢀ
500ꢀ
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(I
GateꢁSourceꢀvoltage
D
ꢀ=ꢀ44A,ꢀRg=25Ω)[1]
VGS
±20
Powerꢀdissipationꢀ(TCꢀ=ꢀ25°C)
Ptot
298ꢀ
W
°C
Tjꢀ,ꢀT stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55...+150
Solderingꢀtemperature,ꢀwaveꢀsolderingꢀonlyꢀallowedꢀatꢀleadsꢀ
(1.6mmꢀfromꢀcaseꢀforꢀ10s)
Tsold
260
°C
※.ꢀNotes:
1.EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25℃,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=44.6A,ꢀVGSꢀ=ꢀ10V.ꢀ
2.Repetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀ
frequencyꢀandꢀdutyꢀcyclesꢀtoꢀkeepꢀinitialꢀTJꢀ=25°C.
Rev 1.0
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