Datasheet > CRMM4100C

CRMM4100C

更新时间： 2024-03-03 10:11:19

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
11页	1141K
描述
SOP-8

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中文翻译

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数据手册

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CRMM4100C 数据手册

CRMM4100C

100V Complementary Power MOSFET

华润微电子(重庆)有限公司

Features

Product Summary

Symbol

V_DS

N-Ch

100V

75mΩ

P-Ch

-100V

68mΩ

-4A

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Complementary N-ch and P-ch MOSFET

R_{DS(on) typ.}

I_D

100% DVDS Tested

Applications

• Motor drive

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

Package

SOP-8

Packing Reel Size

Taping N/A

Tape Width

N/A

Qty

CRMM4100C

4000pcs

Absolute Maximum Ratings

Parameter

Maximum

Symbol

Unit

N-Ch

P-Ch

-100

-4

V_DS

I_D

Drain-source voltage

100

Continuous drain current T_C= 25°C (Silicon limit)

Continuous drain current T_C= 25°C (Package limit)

Continuous drain current T_C= 100°C (Silicon limit)

I_D

-4

I_D

-3

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

±20

2.8

-17

150

±20

2.8

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Rev1.2

©China Resources Microelectronics (Chongqing) Limited

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