Datasheet > CRMM4911C

CRMM4911C

更新时间： 2024-09-25 17:02:15

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
11页	1196K
描述
TO-252-5

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中文翻译

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数据手册

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CRMM4911C 数据手册

CRMM4911C

40V Complementary Power MOSFET

华润微电子(重庆)有限公司

Features

Product Summary

Symbol

V_DS

N-Ch

40V

P-Ch

-40V

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Complementary N-ch and P-ch MOSFET

R_{DS(on) typ.}

I_D

30mΩ

16A

30mΩ

-16A

100% DVDS Tested

Applications

• Motor drive

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size

Tape Width

N/A

Qty

Packing

Taping

CRMM4911C

TO-252-5

N/A

2500pcs

Absolute Maximum Ratings

Parameter

Maximum

Symbol

Unit

N-Ch

P-Ch

-40

V_DS

I_D

Drain-source voltage

Continuous drain current T_C= 25°C (Silicon limit)

-28

-16

-64

Continuous drain current T_C= 25°C (Package limit)

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

I_D

)

I_{D pulse}

E_AS

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

±20

24.4

±20

24.4

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Rev1.1

©China Resources Microelectronics (Chongqing) Limited

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