Datasheet > CRF-24010-001

CRF-24010-001

更新时间： 2024-01-18 00:34:17

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
7页	125K
描述
Transistor,

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技术参数
数据手册

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CRF-24010-001 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	FET 技术：	METAL SEMICONDUCTOR
最高工作温度：	295 °C	极性/信道类型：	N-CHANNEL
子类别：	Other Transistors	Base Number Matches：	1

CRF-24010-001 数据手册

CRF-24010-001

CRF-24010-101

10 W SiC RF Power MESFET

CASE STYLE 001 (Pill)

CRF-24010-001

PRELIMINARY

Features

Applications

• 15 dB Small Signal Gain

• Wideband Military Communications

• Secure Comms for Homeland Defense

• 10 W Minimum P

• 48 V Operation

1dB

• Class A, AB Amplifiers

• TDMA, EDGE, CDMA, and W-CDMA

• Broadband Amplifiers

• CATV Amplifiers

• High Breakdown Voltage

• High Temperature Operation

• Up to 2.7 GHz Operation

• High Efficiency

• MMDS

CASE STYLE 101 (Flange)

CRF-24010-101

Description

Cree’s CRF-24010 is a silicon carbide (SiC) RF power Metal-Semiconductor

Field-Effect Transistor (MESFET). SiC has superior properties compared to

silicon or gallium arsenide, including higher breakdown voltage, higher satu-

rated electron drift velocity, and higher thermal conductivity. SiC MESFETs

offer greater power density and wider bandwidths compared to Si and GaAs

transistors.

Angled lead = Gate

Non-angled lead = Drain

Case/Flange = Source

Absolute Maximum Ratings (not simultaneous) at 25°C Case Temperature

Parameter

Symbol

Rating

120

Units

VDC

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature

DSS

-20, +3

-40, 150

250

STG

Operating Junction Temperature

Thermal Resistance, Junction to Case

Soldering Temperature

°C

3.6

°C/W

°C

θJC

225

Cree, Inc. 2003

Specifications subject to change without notice

http://www.cree.com/

Rev 1.14 - November 12, 2003

12 3 4 5 6 7

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