CRF-24010-001
CRF-24010-101
10 W SiC RF Power MESFET
CASE STYLE 001 (Pill)
CRF-24010-001
PRELIMINARY
Features
Applications
• 15 dB Small Signal Gain
• Wideband Military Communications
• Secure Comms for Homeland Defense
• 10 W Minimum P
• 48 V Operation
1dB
• Class A, AB Amplifiers
• TDMA, EDGE, CDMA, and W-CDMA
• Broadband Amplifiers
• CATV Amplifiers
• High Breakdown Voltage
• High Temperature Operation
• Up to 2.7 GHz Operation
• High Efficiency
• MMDS
CASE STYLE 101 (Flange)
CRF-24010-101
Description
Cree’s CRF-24010 is a silicon carbide (SiC) RF power Metal-Semiconductor
Field-Effect Transistor (MESFET). SiC has superior properties compared to
silicon or gallium arsenide, including higher breakdown voltage, higher satu-
rated electron drift velocity, and higher thermal conductivity. SiC MESFETs
offer greater power density and wider bandwidths compared to Si and GaAs
transistors.
Angled lead = Gate
Non-angled lead = Drain
Case/Flange = Source
Absolute Maximum Ratings (not simultaneous) at 25°C Case Temperature
Parameter
Symbol
Rating
120
Units
VDC
VDC
°C
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature
V
T
DSS
V
-20, +3
-40, 150
250
GS
STG
Operating Junction Temperature
Thermal Resistance, Junction to Case
Soldering Temperature
T
°C
J
R
3.6
°C/W
°C
θJC
T
225
S
©
Cree, Inc. 2003
Specifications subject to change without notice
http://www.cree.com/
Rev 1.14 - November 12, 2003