CRF24060

更新时间： 2024-02-28 13:27:37

品牌	Logo	应用领域
科锐 - CREE		晶体晶体管射频
页数	文件大小	规格书
10页	636K
描述
60 W, SiC RF Power MESFET

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技术参数
数据手册

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CRF24060 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.59	Base Number Matches：	1

CRF24060 数据手册

PRELIMINARY

CRF24060

60 W, SiC RF Power MESFET

Cree’s CRF24060 is an unmatched silicon carbide (SiC) RF power Metal-

Semiconductor Field-Effect Transistor (MESFET). SiC has superior

properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity, and higher

thermal conductivity. SiC MESFETs offer greater efﬁciency, greater power

density, and wider bandwidths compared to Si and GaAs transistors.

FEATURES

APPLICATIONS

• 13 dB Small Signal Gain

• Wideband Military Communications

• Secure Comms for Homeland Defense

• Class A, A/B Ampliﬁers

• High Efﬁciency

• 50 W minimum P_1dB

• Up to 2400 MHz Operation

• 48 V Operation

• TDMA, EDGE, CDMA, W-CDMA

• Broadband Ampliﬁers

• High Breakdown Voltage

• High Temperature Operation

• MMDS

Typical Performance

•

Drain Efﬁciency of 45% at 1500 MHz at 60 W P_OUT

IMD -31 dBc at 1000 MHz at 50 W PEP

13 dB Small Signal Gain at 1500 MHz

60 W @ P_1dBat 1500 MHz

80 W P_3dBat 1500 MHz

Note: Measured in ampliﬁer circuit CRF24060-TB at V_DS= 48 V, I_DQ= 2000 mA.

Subject to change without notice.

www.cree.com/wireless

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