Datasheet > CQY37N_08

CQY37N_08

更新时间： 2022-12-17 02:07:08

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
5页	294K
描述
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

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CQY37N_08 数据手册

CQY37N

Vishay Semiconductors

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

FEATURES

• Package type: leaded

• Package form: T-¾

• Dimensions (in mm): ∅ 1.8

• Peak wavelength: λ_p= 950 nm

• High reliability

• Angle of half intensity: ϕ = 12°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector BPW17N

94 8638-2

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

DESCRIPTION

CQY37N is an infrared, 950 nm emitting diode in GaAs

technology molded in a miniature, clear plastic package with

lens.

APPLICATIONS

• Radiation source in near infrared range

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

_P(nm)

t_r(ns)

CQY37N

950

800

Note

Test conditions see table “Basic Characteristics“

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

PACKAGE FORM

CQY37N

MOQ: 5000 pcs, 5000 pcs/bulk

T-¾

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

Forward current

100

Surge forward current

Power dissipation

t_p≤ 100 µs

I_FSM

P_V

T_j

160

100

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/ambient

T_amb

T_stg

- 25 to + 85

- 25 to + 100

245

°C

t ≤ 3 s

T_sd

°C

leads not soldered

R_thJA

450

K/W

Note

T_amb= 25 °C, unless otherwise specified

www.vishay.com

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81002

Rev. 1.6, 04-Sep-08

12 3 4 5

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