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CP710V-2N6520 PDF预览

CP710V-2N6520

更新时间: 2024-10-01 20:45:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
5页 674K
描述
Small Signal Bipolar Transistor,

CP710V-2N6520 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.69
Base Number Matches:1

CP710V-2N6520 数据手册

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CP710V-2N6520  
PNP - High Voltage Transistor Die  
www.centralsemi.com  
The CP710V-2N6520 is a silicon PNP transistor designed for high voltage applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
26 x 26 MILS  
7.1 MILS  
B
Die Thickness  
Base Bonding Pad Size  
Emitter Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
6.1 x 4.9 MILS  
5.2 x 5.2 MILS  
Al – 30,000Å  
Au – 9,000Å  
2.2 MILS  
E
5 INCHES  
BACKSIDE COLLECTOR  
R2  
Gross Die Per Wafer  
25,214  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
350  
350  
5.0  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
V
V
Emitter-Base Voltage  
Continuous Collector Current  
Continuous Base Current  
I
500  
250  
mA  
mA  
°C  
C
I
B
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=250V  
50  
nA  
CBO  
CB  
I
V
=4.0V  
50  
nA  
V
V
V
V
V
V
V
V
V
V
V
EBO  
EB  
BV  
BV  
BV  
I =100μA  
350  
350  
5.0  
CBO  
CEO  
C
I =1.0mA  
C
I =10μA  
EBO  
E
V
V
V
V
V
V
V
V
I =10mA, I =1.0mA  
0.30  
0.35  
0.50  
1.0  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
I =20mA, I =2.0mA  
C
B
I =30mA, I =3.0mA  
C
B
I =50mA, I =5.0mA  
C
B
I =10mA, I =1.0mA  
0.75  
0.85  
0.90  
2.0  
C
B
I =20mA, I =2.0mA  
C
B
I =30mA, I =3.0mA  
C
B
V
=10V, I =100mA  
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
h
V
V
V
V
V
=10V, I =1.0mA  
20  
30  
30  
20  
15  
C
=10V, I =10mA  
FE  
C
=10V, I =30mA  
200  
200  
FE  
C
=10V, I =50mA  
FE  
C
=10V, I =100mA  
FE  
C
R0 (1-August 2016)  

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