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CP716-2N5401-CT PDF预览

CP716-2N5401-CT

更新时间: 2024-10-02 06:23:47
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 209K
描述
Transistor

CP716-2N5401-CT 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84Base Number Matches:1

CP716-2N5401-CT 数据手册

 浏览型号CP716-2N5401-CT的Datasheet PDF文件第2页 
TM  
PROCESS CP716  
Small Signal Transistor  
PNP - High Voltage Transistor Chip  
Central  
Semiconductor Corp.  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
Die Thickness  
20 x 20 MILS  
9.0 MILS  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
4.0 x 4.0 MILS  
4.7 x 4.7 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
29,250  
PRINCIPAL DEVICE TYPES  
CMPT5401  
CXT5401  
CZT5401  
2N5401  
BACKSIDE COLLECTOR  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R2 (1-August 2002)  

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