Datasheet > CP527-2N6299-CT

CP527-2N6299-CT

更新时间： 2025-09-18 19:29:07

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CENTRAL		/
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CP527-2N6299-CT 数据手册

CP527

PNP - Darlington Transistor Die

10 Amp, 80 Volt

www.centralsemi.com

The CP527 die is a silicon PNP Darlington power transistor designed for high gain ampliﬁer

applications.

MECHANICAL SPECIFICATIONS:

Die Size

110 x 110 MILS

10.6 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

21 x 24 MILS

24 x 42 MILS

Al – 20,000Å

Ni/Ag – 2,000Å/10,000Å

4.3 mils

4 INCHES

Gross Die Per Wafer

700

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

5.0

Emitter-Base Voltage

Continuous Collector Current

Operating and Storage Junction Temperature

T , T

-65 to +200

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=80V

1.0

CEO

=5.0V

EBO

I =100μA

CBO

CEO

I =3.0mA

I =5.0mA

5.0

EBO

I =5.0A, I =10mA

2.0

2.8

CE(SAT)

BE(ON)

=3.0V, I =5.0A

1.0K

20K

200

=10V, I =0, f=1.0MHz

R1 (21-October 2014)

12 3 4

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