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CNY75GA PDF预览

CNY75GA

更新时间: 2024-01-31 18:55:04
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
12页 202K
描述
Optocoupler with Phototransistor Output

CNY75GA 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.69
Is Samacsys:N当前传输比率-最小值:160%
最大正向电流:0.06 A最大正向电压:1.6 V
最大绝缘电压:5300 VJESD-609代码:e0
安装特点:THROUGH HOLE MOUNT元件数量:1
最大通态电流:0.05 A最高工作温度:100 °C
最低工作温度:-55 °C最大功率耗散:0.25 W
最长响应时间:0.000037 s子类别:Optocoupler - Transistor Outputs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

CNY75GA 数据手册

 浏览型号CNY75GA的Datasheet PDF文件第1页浏览型号CNY75GA的Datasheet PDF文件第2页浏览型号CNY75GA的Datasheet PDF文件第3页浏览型号CNY75GA的Datasheet PDF文件第5页浏览型号CNY75GA的Datasheet PDF文件第6页浏览型号CNY75GA的Datasheet PDF文件第7页 
CNY75(G) Series  
Vishay Semiconductors  
Maximum Safety Ratings (according to VDE 0884) see figure 1  
This device is used for protective separation against electrical shock only within the maximum safety ratings.  
This must be ensured by using protective circuits in the applications.  
Input (Emitter)  
Parameters  
Forward current  
Test Conditions  
Symbol  
Value  
130  
Unit  
mA  
I
si  
Output (Detector)  
Parameters  
Power dissipation  
Test Conditions  
25 C  
Symbol  
Value  
265  
Unit  
mW  
T
amb  
P
si  
Coupler  
Parameters  
Rated impulse voltage  
Safety temperature  
Test Conditions  
Symbol  
Value  
6
150  
Unit  
kV  
C
V
IOTM  
T
si  
Insulation Rated Parameters (according to VDE 0884)  
Parameter  
Partial discharge test voltage – 100%, t  
Routine test  
Test Conditions  
= 1 s  
Symbol  
V
pd  
Min.  
1.6  
Typ.  
Max.  
Unit  
kV  
test  
Partial discharge test voltage – t = 60 s, t  
= 10 s,  
V
IOTM  
6
1.3  
kV  
kV  
Tr  
test  
Lot test (sample test)  
(see figure 2)  
V
pd  
12  
Insulation resistance  
V
V
T
amb  
= 500 V  
= 500 V,  
100 C  
R
R
10  
IO  
IO  
11  
10  
IO  
IO  
9
V
IO  
= 500 V,  
R
IO  
10  
T
150 C  
amb  
(construction test only)  
V
IOTM  
275  
250  
V
t , t = 1 to 10 s  
1 2  
t , t = 1 s  
3 4  
P
si  
(mW)  
225  
t
= 10 s  
= 12 s  
test  
200  
175  
150  
125  
100  
t
stres  
V
Pd  
V
V
IOWM  
IORM  
75  
50  
25  
0
I
(mA)  
si  
0
t
t
t
3 test 4  
0
25  
50  
75 100 125 150 175  
t
= 60 s  
t
t
t
Tr  
1
2
stres  
95 10923  
T
amb  
– Ambient Temperature ( °C )  
13930  
t
Figure 1. Derating diagram  
Figure 2. Test pulse diagram for sample test according to  
DIN VDE 0884  
4 (12)  
Rev. A4, 11–Jan–99  

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