Datasheet > CMT18N20

CMT18N20

更新时间： 2022-10-22 09:45:20

品牌	Logo	应用领域
其他 - ETC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	199K
描述
POWER FIELD EFFECT TRANSISTOR

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CMT18N20 数据手册

CMT18N20

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high

speed power switching applications such as switching

regulators, converters, solenoid and relay drivers.

ꢀ

Silicon Gate for Fast Switching Speeds

Low R_DS(on)to Minimize On-Losses. Specified at Elevated

Temperature

ꢀ

Rugged – SOA is Power Dissipation Limited

Source-to-Drain Characterized for Use With Inductive

Loads

PIN CONFIGURATION

SYMBOL

TO-220

Front View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

CMT18N20N220

TO-220

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Symbol

I_D

Value

Unit

I_DM

Gate-to-Source Voltage － Continue

－ Non-repetitive

Total Power Dissipation

V_GS

V_GSM

P_D

±20

±40

125

Derate above 25℃

1.00

-55 to 150

224

W/℃

℃

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_L= 18A, L = 1.38mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

T_J, T_STG

E_AS

θ_JC

θ_JA

T_L

1.00

62.5

260

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

(1) Pulse Width and frequency is limited by TJ(max) and thermal response

2001/11/01 Draft

Champion Microelectronic Corporation

Page 1

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