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CMD637S8 PDF预览

CMD637S8

更新时间: 2024-05-23 22:22:36
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
8页 1731K
描述
SO-8

CMD637S8 数据手册

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CMD637S8  
Dual N and P Channel 60V (D-S) Power MOSFET  
Description  
Applications  
CMD637S8 is the Dual N and P-Channel enhancement  
mode power field effect transistors with high cell density,  
trench technology. This high density process and design  
have been optimized switching performance and especial-  
ly tailored to minimize on-state resistance.  
Cellular Handsets and Accessories  
Personal Digital Assistants  
Portable Instrumentation  
Load switch  
Marking Information  
Features  
N-Channel VDS: 60V  
N-Channel ID: 6.3A  
Marking Code = D637S8  
Date Code = XXXX  
D637S8  
N-Channel RDSON (@VGS=10V) : < 30mΩ  
N-Channel RDSON (@VGS=4.5V) : < 37mΩ  
P-Channel VDS: -60V  
P-Channel ID: -3.9A  
P-Channel RDSON (@VGS=-10V) : < 78mΩ  
P-Channel RDSON (@VGS=-4.5V) : < 105mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Part Number  
Packaging  
Reel Size  
Equivalent Circuit and Pin Configuration  
CMD637S8  
4000/Tape & Reel  
13 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Maximum  
Parameter  
Symbol  
Unit  
N-Channel P-Channel  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
60  
±20  
6.3  
4.0  
26  
-60  
±20  
-3.9  
-2.4  
-16  
2
V
V
TA=25°C  
TA=70°C  
A
Continuous Drain Current  
Pulsed Drain Current(1)  
Total Power Dissipation @ TC=25°C (2)  
Total Power Dissipation @ TA=25°C (2)  
Thermal Resistance Junction-to-Ambient (2)  
Junction and Storage Temperature Range  
ID  
A
IDM  
PD  
A
2
W
1.9  
62.5  
1.9  
62.5  
W
RθJA  
°C/W  
°C  
TJ,TSTG  
-55 to +150 -55 to +150  
Revision_1.0  
1 of 8  
www.appliedpowermicro.com  

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