CMD637S8
Dual N and P Channel 60V (D-S) Power MOSFET
Description
Applications
CMD637S8 is the Dual N and P-Channel enhancement
mode power field effect transistors with high cell density,
trench technology. This high density process and design
have been optimized switching performance and especial-
ly tailored to minimize on-state resistance.
Cellular Handsets and Accessories
Personal Digital Assistants
Portable Instrumentation
Load switch
Marking Information
Features
N-Channel VDS: 60V
N-Channel ID: 6.3A
Marking Code = D637S8
Date Code = XXXX
D637S8
N-Channel RDSON (@VGS=10V) : < 30mΩ
N-Channel RDSON (@VGS=4.5V) : < 37mΩ
P-Channel VDS: -60V
P-Channel ID: -3.9A
P-Channel RDSON (@VGS=-10V) : < 78mΩ
P-Channel RDSON (@VGS=-4.5V) : < 105mΩ
High density cell design for extremely low RDSON
Excellent on-resistance and DC current capability
Ordering Information
Part Number
Packaging
Reel Size
Equivalent Circuit and Pin Configuration
CMD637S8
4000/Tape & Reel
13 inch
G2
S2
G1
Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)
Maximum
Parameter
Symbol
Unit
N-Channel P-Channel
Drain-source Voltage
Gate-source Voltage
VDS
VGS
60
±20
6.3
4.0
26
-60
±20
-3.9
-2.4
-16
2
V
V
TA=25°C
TA=70°C
A
Continuous Drain Current
Pulsed Drain Current(1)
Total Power Dissipation @ TC=25°C (2)
Total Power Dissipation @ TA=25°C (2)
Thermal Resistance Junction-to-Ambient (2)
Junction and Storage Temperature Range
ID
A
IDM
PD
A
2
W
1.9
62.5
1.9
62.5
W
RθJA
°C/W
°C
TJ,TSTG
-55 to +150 -55 to +150
Revision_1.0
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