Datasheet > CM600HG-130X

CM600HG-130X

更新时间： 2024-06-27 12:12:31

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CM600HG-130X 数据手册

< High Voltage Insulated Gate Bipolar Transistor: HVIGBT >

CM600HG-130X

HIGH POWER SWITCHING USE

INSULATED TYPE

5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM600HG-130X

⚫

I_{C··································································}600 A

V_{CES·························································}6500 V

1-element in a Pack

Insulated Type

CSTBT^TM(III)

RFC Diode

AlSiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

Mar. 2022 (HVM-1080-E)

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
CM600HG-90H	MITSUBISHI	获取价格	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM600HN-5F	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE
CM600HN-5F_09	MITSUBISHI	获取价格	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM600HU-12F	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE
CM600HU-12F	POWEREX	获取价格	Trench Gate Design Single IGBTMOD⑩ 600 Ampere
CM600HU-12F_09	MITSUBISHI	获取价格	IGBT MODULES HIGH POWER SWITCHING USE
CM600HU-12H	MITSUBISHI	获取价格	HIGH POWER SWITCHING USE INSULATED TYPE
CM600HU-12H	POWEREX	获取价格	Single IGBTMOD 600 Amperes/600 Volts
CM600HU-12H_09	MITSUBISHI	获取价格	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM600HU-24F	POWEREX	获取价格	Trench Gate Design Single IGBTMOD⑩ 600 Ampere