Datasheet > CM45N10GU

CM45N10GU

更新时间： 2024-09-24 17:15:23

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1232K
描述
TO-252

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CM45N10GU 数据手册

CM45N10GU

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CM45N10GU is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

Marking Code = 45N10GU

Date Code = XXXX



VDS: 100V

ID : 47A

45N10GU

RDS_ON(@VGS=10V) : < 17.5mΩ

RDS_ON(@VGS=4.5V) : < 22mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

TO-252

Part Number

Packaging

Remark

CM45N10GU 2500/Tape & Reel

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

100

±20

Gate-source Voltage

Tc=25°C

Tc=70°C

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

Total Power Dissipation ⁽²⁾

IDM

P_D@ Tc=25°C

Derating Factor above 25°C

RθJC

188

0.6

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽²⁾

1.67

-55 to +150

Junction and Storage Temperature Range

TJ,TSTG

Jun. 2021, Rev. 0.1

1 of 5

www.appliedpowermicro.com

12 3 4 5

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